SKM 2023 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: 2D Materials and their Heterostructures II: h-BN and WSe₂

DS 2.5: Vortrag

Montag, 27. März 2023, 12:30–12:45, SCH A 316

Atomic structures of single photon emitters in hexagonal boron nitride — •Tjorben Matthes¹, Anand Kumar¹, Chanaprom Cholsuk¹, and Tobias Vogl^{1, 2} — ¹Institute of Applied Physics, Friedrich-Schiller-University Jena, Albert-Einstein-Straße 15, 07745 Jena — ²Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications. Fluorescent defects in hexagonal boron nitride (hBN) stand out due to their high luminosity and robust operation at room temperature. The fabrication of identical emitters at pre-defined sites is still challenging, which hampers the integration of these defects in optical systems and electro-optical devices. Additionally, the atomic structure of many defects remain unclear or are subject to ambiguous guess-work. Here, we show an analysis on the atomic structures of defects we created by electron beam irradiation using a standard scanning electron microscope with deep sub-micron lateral precision. The emitters are created with a high yield and a reproducible spectrum peaking at 575 nm. We also present results on correlating crystal structure properties and polarization dynamics. Our results indicate that these emitters that all emitters are identical, which is a crucial advantage for the realization of quantum integrated devices, as well as for the identification of these fluorescent defects.