SKM 2023 – scientific programme

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DS: Fachverband Dünne Schichten

DS 8: Thin Film Properties III

DS 8.5: Talk

Tuesday, March 28, 2023, 12:30–12:45, SCH A 315

The challenge to grow β-(AlxGa1-x)2O3 on (100) off-oriented β-Ga2O3 by MOVPE — •Jana Rehm, Ta-Shun Chou, Arub Akhtar, Raimund Grüneberg, Saud Bin-Anooz, and Andreas Popp — Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Deutschland

Although immense progress in homoepitaxial thin film growth of β-Ga2O3 on different substrate orientations has been achieved, β-Ga2O3 based high-efficiency devices are still limited by the materials intrinsic low thermal conductivity and electron mobility. Increasing the bandgap by alloying β-Ga2O3 with Al2O3 opens up the possibility to overcome the materials restraints and realize high-performance lateral β-(AlxGa1-x)2O3/Ga2O3 heterostructure devices. It has been shown that the crystal orientation plays an important role in the Al incorporation limit and band offsets where the (100) orientation is predicted to be the most promising orientation exhibiting the highest critical thickness and incorporated Al content. The role of off-oriented (100) β-Ga2O3 substrates is suggested to achieve the full advantage of β-(AlxGa1-x)2O3/Ga2O3 heterostructure with the benefit of potentially suppressing the formation of twin defects. For the first time, we report a comprehensive study on the growth of β-(AlxGa1-x)2O3 on off-oriented (100) β-Ga2O3 substrates using MOVPE. The influence of different growth parameters on the morphology and Al incorporation are systematically investigated by HR-XRD and AFM.