SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Layer Properties I
DS 9.2: Vortrag
Mittwoch, 29. März 2023, 10:00–10:15, SCH A 316
Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices — •Taewook Kim1, Tobias Vogel1, Eszter Piros1, Despina Nasiou2, Nico Kaiser1, Philipp Schreyer1, Robert Winkler2, Alexander Zintler2, Alexey Arzumanov1, Stefan Petzold1, Leopoldo Molina-Luna2, and Lambert Alff1 — 1Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany — 2Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany
This study investigates the resistive switching mechanism and electrical conduction mechanism of the Cu/HfO2/Pt MIM (Metal-Insulator-Metal) structure. In this study, we investigated the resistance switching characteristics of Cu/HfO2/Pt samples. Specifically, we focus on changes in resistive switching characteristics as a function of oxide layer thickness. We noticed an interesting phenomenon of resistance switching property, that the reset switching occurs more sharply and abruptly in the sample with thick HfO2 film. However, gradual reset is more dominant in the sample with thin HfO2 film. Therefore, we devised the model (Thermally Assisted Electrochemical Mechanism) to explain the physical phenomenon. For better understanding, the conduction mechanism of Cu/HfO2/Pt samples was also investigated. Cu/HfO2/Pt has SCLC (Space Charge Limited Conduction) mechanism as the conduction mechanism. However, the mechanism is divided into several steps depending on the thickness of the oxide layer.