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HL: Fachverband Halbleiterphysik

HL 10: Focus Session: Progress in Hybrid Phononic Quantum Technologies II

HL 10.8: Vortrag

Montag, 27. März 2023, 17:45–18:00, POT 151

Strongly Stressed 3C-SiC Nanostring Resonators With High Quality Factors — •Philipp Bredol¹, Yannick Klaß¹, Felix David¹, Eva Weig¹, Nagesh S. Japtap^2,3, Manfred Helm^2,3, Georgy Astakhov², and Artur Erbe^2,3 — ¹Technical University of Munich, Chair of Nano and Quantum Sensors, 85748 Munich, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — ³Dresden University of Technology, 01062 Dresden, Germany

Strongly stressed SiC nanostring resonators are a promising platform for sensing applications. SiC is mechanically, chemically, and thermally robust and process compatible with many Si technologies. Mechanical quality factors in the 10⁵ range are achieved at room temperature with devices of ≈ 70×1 µm² footprint.

Because the mechanical quality factor often determines sensitivity and resolution of nanomechanical sensors, the understanding of mechanical loss mechanisms is important for possible applications. In this contribution we show how to separate intrinsic material losses and dissipation dilution effects by analyzing mechanical response spectra. We apply these methods to analyze how He⁺ irradiation damage affects the mechanical properties of SiC nanostring resonators (see contribution of Nagesh S. Jagtap).