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HL: Fachverband Halbleiterphysik
HL 12: Semiconductor lasers I
HL 12.5: Vortrag
Montag, 27. März 2023, 16:30–16:45, POT 112
AlGaInP-based VECSELs with grating waveguide structures — •Peter Gierss1, Ana Ćutuk1, Maxim Leyzner2, Uwe Brauch2, Marwan Abdou Ahmed2, Michael Jetter1, Thomas Graf2, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart — 2Institut für Strahlwerkzeuge, Universität Stuttgart, Pfaffenwaldring 43, 70569 Stuttgart
Vertical external-cavity surface-emitting lasers (VECSELs) provide several superior properties like a near-diffraction beam profile and the flexibility to add optical components inside the cavity for further tailoring of the laser parameters. However, the heat generated by the pump laser within the active region proves to be a limiting factor for achieving higher output powers. This is mainly due to the poor thermal conductivity of the thick distributed Bragg reflector (DBR), which could be overcome by placing a heatspreader right next to the active region.
In this contribution, we present our recent progress in the development of an AlGaInP-VECSEL based on a grating waveguide structure (GWS). Excluding the DBR and adding a heatspreader instead improves the heat removal from the gain region while the guided-mode resonances from the GWS should provide good coupling of the pump and laser field and a high reflectivity to replace the function of the DBR. Our current research focuses on the fabrication and characterization of the high-contrast grating on top of a gain membrane.