SKM 2023 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 12: Semiconductor lasers I

HL 12.7: Talk

Monday, March 27, 2023, 17:00–17:15, POT 112

Multifold lasing threshold reduction of optically pumped micropillar lasers with low-absorbing Al_0.2Ga_0.8As/Al_0.9Ga_0.1As distributed Bragg reflectors — •Ching-Wen Shih¹, Imad Limame¹, Chirag Palekar¹, Sebastian Krüger¹, Aris Koulas-Simos¹, Daniel Brunner², and Stephan Reitzenstein¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany — ²Département d’Optique P. M. Duffieux, Institut FEMTO-ST, Université Bourgogne-Franche-Comté CNRS UMR 6174, Besançon, France

Micropillar photonic devices, where the active layers are in an optical cavity sandwiched between epitaxially grown dielectric Bragg mirrors (DBRs), are one of the fundamental elements to study cavity quantum electrodynamics and to enable devices for quantum technology applications. Here, we report on the experimental realization of multifold lasing threshold reduction of optically pumped micropillar lasers by simply replacing the commonly used GaAs/Al_0.9Ga_0.1As DBRs with low-absorbing Al_0.2Ga_0.8As/Al_0.9Ga_0.1As DBRs, which minimizes the DBRs absorption of the optical pump power. In pump-wavelength-dependent I/O measurements, we demonstrate that the incorporation of 20% Al content in the DBRs opens an optical pumping window from the absorption edge of Al_0.2Ga_0.8As at 700 nm to the one of GaAs at 820 nm, where the excitation laser light can effectively reach the GaAs cavity above its bandgap while remaining transparent to the DBRs, resulting in high power conversion efficiency, low lasing threshold, and high thermal stability.