HL 12: Semiconductor lasers I
Montag, 27. März 2023, 15:00–17:15, POT 112
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15:00 |
HL 12.1 |
Adjustment of the active region on an InGaAsP VECSEL around 760nm for red pumping — •Rebecca Rühle, Marius Grossmann, Michael Jetter, and Peter Michler
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15:15 |
HL 12.2 |
Cavity effects in hybrid resonators embedding InGaAs quantum dots — •Kartik Gaur, Sarthak Tripathi, Imad Limame, Ching-Wen Shih, Chirag Palekar, Sven Rodt, and Stephan Reitzenstein
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15:30 |
HL 12.3 |
Latest developments on membrane external-cavity surface-emitting lasers (MECSELs) — •Hermann Kahle, Patrik Rajala, Philipp Tatar-Mathes, and Mircea Guina
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15:45 |
HL 12.4 |
Membrane saturable absorber mirror (MESAM) in a red-emitting VECSEL for the generation of stable ultrashort pulses — •Ana Ćutuk, Marius Grossmann, Michael Jetter, and Peter Michler
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16:00 |
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30 min. break
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16:30 |
HL 12.5 |
AlGaInP-based VECSELs with grating waveguide structures — •Peter Gierss, Ana Ćutuk, Maxim Leyzner, Uwe Brauch, Marwan Abdou Ahmed, Michael Jetter, Thomas Graf, and Peter Michler
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16:45 |
HL 12.6 |
Manipulating the emission characteristics of VCSEL in the red spectral range with polymer microlenses and etched surface reliefs — Farnaz Khamseh, •Lena Engel, Michael Zimmer, Sergej Vollmer, Michael Jetter, and Peter Michler
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17:00 |
HL 12.7 |
Multifold lasing threshold reduction of optically pumped micropillar lasers with low-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors — •Ching-Wen Shih, Imad Limame, Chirag Palekar, Sebastian Krüger, Aris Koulas-Simos, Daniel Brunner, and Stephan Reitzenstein
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