Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 14: 2D Materials III (joint session HL/CPP)

HL 14.9: Vortrag

Dienstag, 28. März 2023, 11:45–12:00, POT 81

CVD Growth of Hexagonal Boron Nitride on CMOS-compatible Substrates — •Max Franck¹, Jarek Dabrowski¹, Markus Andreas Schubert¹, Walter Batista Pessoa², Dominique Vignaud², Luc Henrard³, Christian Wenger^1,4, and Mindaugas Lukosius¹ — ¹IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — ²University Lille, CNRS, Centrale Lille, JUNIA ISEN, University Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France — ³Department of Physics, Namur Institute of Structured Materials, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium — ⁴Semiconductor Materials, BTU Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany

Hexagonal boron nitride (hBN) is a two-dimensional insulator with a range of promising applications, including DUV optoelectronics and protection layers for high-mobility graphene. Most commonly, high-quality hBN is grown via CVD on catalytic transistion metal substrates. However, the hBN films require transfer to CMOS-compatible substrates, which leaves residual metal contaminations at concentrations unacceptable for Si technology integration.[1] Therefore, growth of hBN thin films directly on CMOS-compatible substrates, such as Si, Ge or dielectrics, is desirable. We present recent results regarding CVD synthesis of well-oriented, few-layer hBN films on such substrates using borazine as a single-source precursor. Morphology and crystallline quality were characterized using XPS, AFM, Raman spectroscopy and TEM. [1] G. Lupina, J. Kitzmann, et al. ACS Nano 2015, 9, 4776-4785.