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HL: Fachverband Halbleiterphysik
HL 14: 2D Materials III (joint session HL/CPP)
HL 14.9: Talk
Tuesday, March 28, 2023, 11:45–12:00, POT 81
CVD Growth of Hexagonal Boron Nitride on CMOS-compatible Substrates — •Max Franck1, Jarek Dabrowski1, Markus Andreas Schubert1, Walter Batista Pessoa2, Dominique Vignaud2, Luc Henrard3, Christian Wenger1,4, and Mindaugas Lukosius1 — 1IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2University Lille, CNRS, Centrale Lille, JUNIA ISEN, University Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France — 3Department of Physics, Namur Institute of Structured Materials, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium — 4Semiconductor Materials, BTU Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
Hexagonal boron nitride (hBN) is a two-dimensional insulator with a range of promising applications, including DUV optoelectronics and protection layers for high-mobility graphene. Most commonly, high-quality hBN is grown via CVD on catalytic transistion metal substrates. However, the hBN films require transfer to CMOS-compatible substrates, which leaves residual metal contaminations at concentrations unacceptable for Si technology integration.[1] Therefore, growth of hBN thin films directly on CMOS-compatible substrates, such as Si, Ge or dielectrics, is desirable. We present recent results regarding CVD synthesis of well-oriented, few-layer hBN films on such substrates using borazine as a single-source precursor. Morphology and crystallline quality were characterized using XPS, AFM, Raman spectroscopy and TEM. [1] G. Lupina, J. Kitzmann, et al. ACS Nano 2015, 9, 4776-4785.