SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 17: THz and MIR physics in semiconductors
HL 17.4: Talk
Tuesday, March 28, 2023, 10:15–10:30, JAN 0027
Characterization of semiconductors and their properties using terahertz TDS and the Drude-Lorentz model — •Joshua Hennig1,2, Jens Klier1, Stefan Duran1, Kuei-Shen Hsu3, Antje Hirsch4, Christian Röder3, Jan Beyer3, Franziska Beyer4, Georg von Freymann1,2, and Daniel Molter1 — 1Center for Materials Characterization and Testing, Fraunhofer ITWM, Kaiserslautern — 2Department of Physics and Research Center Optimas, Technische Universität Kaiserslautern (TUK), Kaiserslautern — 3Institut für Angewandte Physik, TU Bergakademie Freiberg, Freiberg — 4Department of Crystal Growth, Fraunhofer IISB, Freiberg
Semiconductors play an important role in our modern world enabling many of the technological advancements. Therefore, it is of vital interest for an ever-growing industry as well as scientifically to find techniques to characterize optical and electrical properties such as the refractive index as well as the resistivity of these materials. Here, first steps in such characterizations using terahertz time-domain spectroscopy, a nondestructive technology proven to be capable of these challenging tasks, are shown. First, measurements performed on silicon, one of the most commonly used semiconductors, are evaluated to show the measurement principle and confirm the Drude-Lorentz model to be suitable to describe the charge carrier behavior. Next, samples of silicon carbide, an important semiconductor material with applications e.g. in power electronics are examined. The knowledge of these important semiconductor properties can be helpful in quality checks in the production process and any future work with those materials.