SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: THz and MIR physics in semiconductors
HL 17.5: Vortrag
Dienstag, 28. März 2023, 10:30–10:45, JAN 0027
Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers — •Andreas Bader1, Florian Rothmayr2, Nabeel Khan2, Fauzia Jabeen1, Johannes Koeth2, Sven Höfling1, and Fabian Hartmann1 — 1Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Am Hubland, D-97074 Würzburg, Germany — 2nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, D-97218 Gerbrunn, Germany
We present results on interband cascade infrared photodetectors (ICIP) based on Ga-free InAs/InAsSb superlattice (SL) absorbers. An alternative extraction path of photogenerated carriers is required when substituting the more standard InAs/Ga(In)Sb SL absorbers for Ga-free SLs. The device operates in the photovoltaic mode in the mid infrared spectral range with cut-off wavelengths between around 6.5 um at 100 K and 9 um at RT. At elevated temperatures, features of negative-differential-conductance (NDC) emerge. Under illumination, these NDC features can supply gain in the device leading to a peak responsivity of 0.45 A/W at room temperature. At 300 K the zero-bias detectivity D* of the presented device is around 1*10^8 Jones which compares well to similar ICIPs based on InAs/GaSb SL absorbers.