SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: THz and MIR physics in semiconductors
HL 17.6: Vortrag
Dienstag, 28. März 2023, 10:45–11:00, JAN 0027
Assessment of epitaxially grown p-doped InAs on undoped GaSb exhibiting terahertz emission — •Cyril Salang1, Dean Von Johari Narag1, Rommel Jagus1, Gerald Angelo Catindig2, Mae Agatha Tumanguil1, Alexander De Los Reyes2, Ivan Cedrick Verona2, Hannah Bardolaza2, Armando Somintac2, Elmer Estacio2, and Arnel Salvador2 — 1Materials Science and Engineering Program, University of the Philippines Diliman, Philippines — 2National Institute of Physics, University of the Philippines Diliman, Philippines
A p-InAs/undoped-GaSb thin film was grown via molecular beam epitaxy. The 260 Å p-InAs was grown on 260 nm undoped InAs over 10 periods of InGaAs(3 nm)/GaAs(3 nm) superlattice to minimize the surface roughness prior to the p-InAs growth. Three periods of 20-nm undoped GaAs/260-nm undoped InAs served as a buffer with growth interruption applied on the first 2 mins of deposition of each GaAs and InAs layer. X-ray diffraction shows a peak at 2θ ∼61o corresponding to InAs. The sample’s resistance was measured to be 43 Ω. The terahertz (THz) emission was evaluated using 1.55 µm femtosecond laser excitation in reflection geometry. The current sample emits at ∼20 times lower THz intensity compared to that of a previously investigated 1±0.4 µm p-InAs/n-GaSb sample possibly due to the lesser thickness leading to a lower photo-Dember response, and differing crystal qualities from the different growth processes. Nonetheless, exploring growth techniques for producing thin InAs films is desired to realize photoconductive antennas for transmission geometry.