SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 18: Optical Properties (joint session HL/CPP)
HL 18.11: Talk
Tuesday, March 28, 2023, 12:30–12:45, POT 112
Optical properties of a vacancy-related complex in 4H-SiC — •Maximilian Schober1, Nicolas Jungwirth1, Takuma Kobayashi2, Johannes A. F. Lehmeyer2, Michael Krieger2, Heiko B. Weber2, and Michel Bockstedte1 — 1Institute for Theoretical Physics, Johannes Kepler University Linz, Austria — 2Lst. f. Angewandte Physik, Friedrich-Alexander-University Erlangen-Nürnberg, Germany
SiC is host to multiple color centers, such as the silicon vacancy, the divancy, and the carbon antisite-vacancy complex, with relevant applications as qubits, single photon sources and in quantum metrology. Recently, the carbon di-vacancy-antisite complex was identified as an annealing product of vacancy related defects [1], and is expected to feature favorable properties for quantum technology. The presence of strongly localized silicon and carbon dangling bonds points to rich photo- and spin physics that has so far not been explored in detail. In this work we probe the basal and axial configurations of VCCSiVC for their electronic-, optical- and radiative properties using a theoretical framework of hybrid density functional and many body approaches. We obtain the principal transitions, as well as the associated static- and transition dipole moments of the relevant charge states. Our results suggest a tentative identification of the carbon di-vacancy-antisite with the temperature-stable (TS) center [2].
[1] E. M. Y. Lee et al., Nat. Commun. 12, 63 (2021).
[2] M. Rühl, C. Ott, S. Götzinger, M. Krieger, H. B. Weber, Appl. Phys. Lett. 113, 122102 (2018).