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HL: Fachverband Halbleiterphysik

HL 18: Optical Properties (joint session HL/CPP)

HL 18.9: Vortrag

Dienstag, 28. März 2023, 12:00–12:15, POT 112

Interplay between strain, Sn content and temperature in GeSn-based optoelectronic devices — •Ignatii Zaitsev¹, Agnieszka A. Corley-Wiciak¹, Dan Buca², Omar Concepción², Michele Virgilio³, Giovanni Capellini^1,4, Costanza L. Manganelli¹, and Davide Spirito¹ — ¹IHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany — ²PGI 9, Jülich, Germany — ³Università di Pisa, Pisa, Italy — ⁴Università Roma Tre, Roma, Italy

Several works have shown the subtle interplay between thermomechanical strain, Sn content and band occupation in optoelectronic devices based on CMOS-integratable group-IV materials (Ge, SiGe, SiGeSn). This is especially the case when temperature plays a key role, e.g. devices operating at cryogenic temperature or in presence of high power. Here we provide a theoretical-experimental approach combining 3D FEM calculations, Raman and photoluminescence spectroscopy to fully capture the influence of mechanical and thermomechanical features on the optical properties. We apply this method to strained GeSn microdisks, a device geometry aimed at laser in the MIR range. With the presented methods, we can develop a thorough guidelines for the assessment and design of integrated light emitters.