SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 22: 2D Materials IV (joint session HL/CPP)
HL 22.2: Vortrag
Mittwoch, 29. März 2023, 09:45–10:00, POT 81
Single photon emitters in hBN via ultra-low energy helium ion implantation — •Renu Rani1, Mihn Bui1,2, Chenfeng Lu1,2, Bilal Malik1,2, Felix Junge3, Thorsten Brazda1, Detlev Grützmacher1,2, Hans Höfsäss3, and Beata Kardynał1,2 — 1Peter Grünberg Institut-9, Forschungszentrum Jülich, Jülich — 2Department of Physics, RWTH Aachen, Aachen — 3II. Institute of Physics, University of Göttingen, 37077 Göttingen
A discovery of quantum emitters in hexagonal boron nitride (hBN) has recently incited immense interest for quantum technologies. It offers a platform for fundamental science but is also of interest for applications in quantum photonics owing to its robust single photon emission at room temperature. Recent studies have suggested that these SPEs are associated with intrinsic defects, which led to efforts to engineer the SPE in hBN by various methods such as plasma treatment, annealing, laser, e-beam and ion irradiation methods. Despite these efforts, the origin of single photon emission and the correlation of emission with particular defects still need to be scrutinized. Here we use ultra-low energy ion implantation to introduce defects in hBN. We show that helium ions with energies as low as 50 eV are extremely efficient in introducing single photon emitters in hBN. We also show that low temperature annealing increases the density of the emitters. We consider the possible defects that helium ions at the implantation energy can generate in hBN and use statistical data on single photon emitters to discuss the possible origin of the emission. Finally, we discuss the viability of creating emitters in pre-selected locations.