SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 22: 2D Materials IV (joint session HL/CPP)
HL 22.4: Vortrag
Mittwoch, 29. März 2023, 10:15–10:30, POT 81
Electrical control of excitonic complexes in MoSe2 homobilayers — •Bárbara Rosa1, Chirag Palekar1, Alisson Cadore2, Yuhui Yang1, Aris Koula-Simos1, Sefaattin Tongay3, and Stephan Reitzenstein1 — 1Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany — 2Brazilian Nanotechnology National Laboratory, Campinas, Brazil — 3School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, USA
Effects of periodic Moiré potential in transition metal dichalcogenides (TMDs) bilayers are directly controlled by the twist angle between the monolayers. Novel features arising from intra- and interlayer excitons, such as their ultrafast formation and charger transfer, long population recombination lifetimes, and binding energy of dozens of meVs, turn TMD heterostructures into an attractive device for the study and manipulation of optical and transport properties via electrical fields. Moreover, such effects may appear even more pronounced at twisted homobilayers, since the absence of lattice mismatch promotes the appearance of larger Moiré superlattices. In this work, we explore the ability to control excitonic complexes in MoSe2/MoSe2 twisted bilayers (t-BLs) by performing gate-dependent microphotoluminescence (µPL) spectroscopy at room temperature. We observe the energy tunability of several meVs occurring at the emission of excitonic complexes derived from the t-BL region. In addition, other effects, such as the emergence of new excitonic features, are observed through µPL spectroscopy at cryogenic temperatures.