SKM 2023 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 28: Focus Session: Breakthroughs in wide-bandgap semiconductor laser diodes II
HL 28.1: Hauptvortrag
Mittwoch, 29. März 2023, 15:00–15:30, POT 251
Fabrication of AlGaN-based UV-B laser diodes on lattice-relaxed high-quality AlGaN — •Motoaki Iwaya1, Sho Iwayama1,2, Tetsuya Takeuchi1, Satoshi Kamiyama1, and Hideto Miyake2 — 1Meijo Univ., Nagoya, Japan — 2Mie Univ., Tsu, Japan
Recently, AlGaN-based ultraviolet (UV) light-emitting devices have been achieving remarkable performance. Highly efficient UV light-emitting diodes are finding applications in many fields, such as water and air sterilization. Meanwhile, room-temperature oscillation of laser diodes in the UV-C and UV-B region has also been realized in recent years by current injection. In this presentation, we show our realization of UV-B laser diode. To realize UV-B laser diodes, it is essential to fabricate them on lattice-relaxed AlGaN because the lattice mismatch between AlN and AlGaN active layers is at least 1.2%. We have obtained various methods for improving the quality of lattice-relaxed AlGaN, and would like to report on the methods and effects. As specific methods to fabricate lattice-relaxed high-quality AlGaN, we explain AlGaN fabricated by the spontaneous nucleation method and the AlN nanopillar method. We will also discuss the correlation between lattice defects such as dislocations, V-shaped pits, and hillocks and device properties. And we would like to present the characteristics of UV-B laser diodes fabricated on such AlGaN templates.