HL 28: Focus Session: Breakthroughs in wide-bandgap semiconductor laser diodes II
Mittwoch, 29. März 2023, 15:00–16:45, POT 251
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15:00 |
HL 28.1 |
Hauptvortrag:
Fabrication of AlGaN-based UV-B laser diodes on lattice-relaxed high-quality AlGaN — •Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake
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15:30 |
HL 28.2 |
Hauptvortrag:
Breakthrough technologies to realize room-temperature continuous-wave deep-ultraviolet laser diodes — •Maki Kushimoto
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16:00 |
HL 28.3 |
Spectral dynamics of lateral modes and filaments in InGaN broad-ridge laser diodes — •Lukas Uhlig, Dominic J. Kunzmann, Anna Kafar, Szymon Grzanka, Piotr Perlin, and Ulrich T. Schwarz
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16:15 |
HL 28.4 |
Temperature dependent electroluminescence studies of the carrier transport in multi colour deep ultraviolet light emitting diodes — •Jakob Höpfner, Florian Kühl, Marcel Schilling, Anton Muhin, Gregor Hofmann, Friedhard Römer, Tim Wernicke, Bernd Witzigmann, and Michael Kneissl
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16:30 |
HL 28.5 |
265 nm LEDs and laser heterostructures with p-type distributed polarization doping AlGaN layers — •Massimo Grigoletto, Sarina Graupeter, Verena Montag, Jakob Höpfner, Luca Sulmoni, Tim Wernicke, and Michael Kneissl
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