SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Materials and devices for quantum technology I
HL 29.10: Talk
Wednesday, March 29, 2023, 17:45–18:00, POT 151
Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes — •Florian Sledz1, Igor A. Khramtsov2, Assegid M. Flatae1, Stefano Lagomarsino1, Navid Soltani1, Shannon S. Nicley3, Rozita Rouzbahani3, Paulius Pobedinskas3, Ken Haenen3, Jin Qun4, Xin Jiang4, Paul Kienitz5, Peter Haring Bolivar5, Dmitry Yu. Fedyanin2, and Mario Agio1 — 1Laboratory of Nano-Optics, University of Siegen, Germany — 2Moscow, Russian Federation — 3Institute for Materials Research (IMO) & IMOMEC, Hasselt University & IMEC vzw, Belgium — 4Institute of Materials Engineering, University of Siegen, Germany — 5Institute of Graphene-based Nanotechnology, University of Siegen, Germany
A robust single-photon source operating upon electrical injection at ambient condition is desirable for quantum technologies. Silicon-vacancy color centers in diamond are promising candidates as their emission is concentrated in a narrow zero-phonon line with a short excited-state lifetime of ~1 ns. Creating the color centers in n-type diamond (phosphorus-doped) allows the implementation of a Schottky-diode configuration. This provides a simpler approach than the traditional complex diamond semiconductor junctions e.g., p-i-n. Selective optical excitation allows addressing of single silicon-vacancy color centers while suppressing background from mainly nitrogen-vacancy defects created during Si ion implantation. This paves a way for the realization of the predicted bright electroluminescence of color centers.