SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 29: Materials and devices for quantum technology I
HL 29.3: Vortrag
Mittwoch, 29. März 2023, 15:30–15:45, POT 151
Generation of VSi color centers in 4H-SiC using He and Li focused ion beam — •Christian Gobert1, Shravan Kumar Parthasarathy1, Fedor Hrunski2, Roland Nagy2, and Patrick Berwian1 — 1Fraunhofer Institute for Integrated Systems and Device Technology (IISB), 91058 Erlangen, Germany — 2Group of Applied Quantum Technologies, University Erlangen-Nuremberg (FAU), 91058 Erlangen, Germany
The silicon vacancy (VSi) color center in 4H-SiC is a promising candidate as a qubit for quantum sensing, communication, and computing, due to its excellent spin and optical properties1,2, scalability and mature semiconductor technology platform3. VSi color centers can be fabricated by means of high energetic irradiation, e.g., using electrons, ions, neutrons, or laser pulses4. In this contribution, we report on a direct comparison of 3 different irradiation techniques, i.e. He- Li- and electron irradiation, for the first time on the very same sample material. Characterization is accomplished using confocal photoluminescence (PL) measurements on two perpendicular crystal orientations. We investigate the optical and spin properties of generated VSi color centers and employ PL mappings to judge the scalability of the irradiation technique. To evaluate the quality of the generated VSi color centers, PL excitation spectroscopy (PLE) is applied.
[1] R. Nagy et al., Nat. Commun. 10, 1954 (2019)
[2] R. Nagy et al., Appl. Phys. Lett. 118, 144003 (2021)
[3] C. Babin et al., Nat. Mater. 21, 67-73 (2022)
[4] S. Castelletto, A. Boretti, J. Phys.: Photonics 2 (2020) 022001