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HL: Fachverband Halbleiterphysik
HL 29: Materials and devices for quantum technology I
HL 29.5: Vortrag
Mittwoch, 29. März 2023, 16:00–16:15, POT 151
Fabrication and pre-characterization of 10 µm long single-electron shuttling devices. — •Max Beer1, Ran Xue1, Inga Seidler1, Jhih-Sian Tu2, Lino Visser1, Hendrik Bluhm1, and Lars R. Schreiber1 — 1JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany — 2Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, Jülich, Germany
The electron-spin in gate-defined quantum dots in a Si/SiGe quantum well is one of the most promising qubits for scalable quantum computing. Scalability can be achieved by coherent coupling such as conveyor-mode single electron-spin shuttling [1]. Aiming at a shuttle distance of 10 µm, we fabricate a shuttling device with three patterned metal-gate layers forming an array of >140 gates. Al2O3 deposited by atomic layer deposition (ALD) isolates the gates, but also induces potential disorder in the quantum well. This disorder can be reduced by minimizing the oxid thickness [1]. We investigate two strategies: (I) Reduction of oxide thickness towards the ALD limit and (II) replacement of MOS-gates with Pd-Si Schottky-gates wherever applicable. Shuttling devices are selected by a transport measurement-protocol operating at 4.2 K on single electron transistors, which are operated as charge sensors for electron shuttling at 10 mK [2].
[1] Langrock, V. et al., arXiv: 2202.11793 (2022).
[2] Seidler, I. et al., npj Quantum Inf. 8: 100 (2022).
Work funded by the DFG under project number EXC 2004/1-390534769.