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SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 29: Materials and devices for quantum technology I

HL 29.9: Vortrag

Mittwoch, 29. März 2023, 17:30–17:45, POT 151

Structural and electrical characterization of the InAs/CdSe core/shell NWs — •Mane Kalajyan1, Marvin Marco Jansen1,2, Nils von den Driesch3, Erik Zimmermann1, Nataliya Demarina4, Anton Faustmann1, Gerrit Behner1, Christoph Krause1, Benjamin Bennemann1, Jan Karthein1, Detlev Grützmacher1,3, Thomas Schäpers1, and Alexander Pawlis1,31Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, Jülich, Germany — 2Eindhoven University of Technology, Eindhoven, Netherlands — 3Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich, Jülich, Germany — 4Peter Grünberg Institut (PGI-2), Forschungszentrum Jülich, Jülich, Germany

InAs nanowires (NWs) are a well-known basis for field-effect transistors (FETs), light-emitting diodes and lasers, quantum devices and biosensors. The larger band gap material CdSe, having a negligible lattice mismatch to InAs, allows for tailoring the conductive channel at the CdSe/InAs core/shell interface, thus making CdSe an excellent candidate for the InAs surface states passivation.

Here, we present the fabrication, structural, and electrical characterization of a unique InAs/CdSe core/shell NW system. The interface between the core and the shell is proven to be flawless by means of HR-TEM micrographs. Moreover, electrical characterization reveals a high-mobility two-dimensional transport channel in the InAs core. Finally, magnetotransport measurements show clear signs of weak antilocalization. These results make the novel InAs/CdSe hybrid NWs a promising basis for the quantum device applications.

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