SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 3: Focus Session: Progress in Hybrid Phononic Quantum Technologies I
HL 3.9: Talk
Monday, March 27, 2023, 12:45–13:00, POT 151
Effect of helium ion implantation on nanomechanical resonators in 3C-SiC — •Nagesh Shamrao Jagtap1,2, Yannick Klaß3, Felix David3, Philipp Bredol3, Eva Weig3, Manfred Helm1,2, Georgy Astakhov1, and Artur Erbe1,2 — 1Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — 2Dresden University of Technology, 01062 Dresden, Germany — 3Technical University of Munich, Chair of Nano and Quantum Sensors, 85748 Munich, Germany
Silicon carbide (SiC) is a suitable candidate for nanoelectromechanical systems due to its superior mechanical properties. It is also an interesting material platform to study the coupling of mechanical modes with localized spins associated with irradiation-induced defects. Such a spin-mechanical system can be used for quantum sensing applications [1]. The nanomechanical resonators in 3C-SiC are fabricated by standard semiconductor processing techniques such as electron beam lithography and reactive ion etching. They are characterized using Fabry-Pérot interferometer. In the preliminary experiments, we focus on the material modification by helium ion broad beam implantation on strained 3C-SiC resonators. The effect of varying fluence on resonance frequencies and quality factors is studied (see contribution of Philipp Bredol).
[1] A. V. Poshakinskiy and G. V. Astakhov, "Optically detected spin-mechanical resonance in silicon carbide membranes*, PhysRevB.100.094104 (2019)