SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Quantum transport and quantum Hall effects II (joint session HL/TT)
HL 30.5: Vortrag
Mittwoch, 29. März 2023, 16:30–16:45, JAN 0027
Electron Density Depended Giant Negative Magnetoresistance — •Lina Bockhorn and Rolf J. Haug — Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany
Ultra-high mobility two-dimensional electron gases not only show an increasing number of new fractional filling factors, but also an astonishing robust negative magnetoresistance at zero magnetic field [1 -5]. The theoretical description of this negative magnetoresistance is still an open issue due to its complex dependencies on several parameters.
The behavior of the giant negative magnetoresistance is affected by different scattering events, e. g. interface roughness, oval defects, background impurities and remote ionized impurities, which leads to a strong dependence on different parameters. Here, we take a closer look on the temperature dependence of the giant negative magnetoresistance for different electron densities. At low temperatures we observe the predicted temperature dependence of T1/2 [6].
[1] L. Bockhorn et al., Phys. Rev. B 83, 113301 (2011).
[2] A. T. Hatke et al., Phys. Rev. B 85, 081304 (2012).
[3] R. G. Mani et al., Scientific Reports 3, 2747 (2013).
[4] L. Bockhorn et al., Phys. Rev. B 90, 165434 (2014).
[5] L. Bockhorn et al., Appl. Phys. Lett. 108, 092103 (2016).
[6] I. V. Gornyi et al., Phys. Rev. B. 69, 045313 (2004).