SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Poster II
HL 33.10: Poster
Mittwoch, 29. März 2023, 17:00–19:00, P1
Black phosphorus field-effect transistors and its application — •Zahra Fekri1, Himani Arora1, Victoria Constance köst2, Jens Zscharschuch1, Krzysztof Nieweglowski2, Kenji Watanabe3, Takashi Taniguchi4, Manfred Helm1,2, Karlheinz Bock2, and Artur Erbe1,2 — 1Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany — 3Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan — 4International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
Black phosphorus (BP) has been known as a more favorable material in many applications compared to other 2D materials due to its exceptional properties. However, its sensitivity to air species has restricted its integration into active devices. In this work, we used a few nm thickness BP for developing field-effect transistors (FETs). Lithography-free via-encapsulation scheme allows us to fabricate fully-encapsulated BP-based field-effect transistors and perform reliable electrical measurements. Based on our results, we find that the electronic properties of the via-encapsulated BP FETs are significantly improved compared to unencapsulated devices. We further demonstrated a gas-sensing performance based on the BP FET. Our Preliminary result shows the promising potential of BP for applications in advanced gas-sensing technology.