SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.15: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P1

Niobium-Doping of Atomically Thin Molybdenum Disulfide for Optoelectronic Applications — •Osamah Kharsah, Stephan Sleziona, and Marika Schleberger — Universität Duisburg-Essen, Fakultät für Physik and CENIDE, Germany

Two-dimensional materials are predicted to become a very important disruptive technology, opening the door to a plethora of applications across many fields, especially in the field of optoelectronics. Among these materials, atomically thin molybdenum disulfide (MoS₂) has distinguished itself owing to its electronic properties, good thermal stability, and mechanical durability. However, its intrinsic strong n-type conductivity hinders its implementation. Overcoming this hurdle would allow MoS₂ to be used in structures such as p-n junctions either on its own or in tandem with other 2D materials, with the goal of fabricating the next generation of optoelectronic devices. One approach that could solve this problem is substitutional doping to controllably p-dope MoS₂. We report on the direct growth of niobium-doped monolayer MoS₂, which was characterized by Raman- and photoluminescence spectroscopy. Field-effect transistors, with the as-grown Nb-doped MoS₂, showed n-type transport behavior. After annealing the material in a sulfur atmosphere, this switched to an ambipolar transport behavior, which we attribute to the activation of Nb-doping sites. In addition, the hysteresis of this device exhibited a decrease of 4 orders of magnitude, indicating that the influence of intrinsic defects has been remedied by the annealing process.