Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.19: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Resonant Excitation and Resonant Photoluminescence Detection of Silicon Vacancy Centers in 4H Silicon Carbide for Single Photon Emission — •Fedor Hrunski¹, Mike Gerd Georg Köstler¹, Shravan Kumar Parthasarathy^2,1, Maximilian Hollendonner¹, Andre Pointner¹, Christian Gobert², Daniel Scheller¹, and Nagy Roland¹ — ¹Chair of Electron Devices (LEB), Friedrich-Alexander-University, Erlangen, Germany — ²Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany

For today, quantum networks deal with the task of entangling several qubits with each other over a larger distance. Therefore, the resonant excitation of the qubits and the resonant detection of emitted photons by them appears to be an essential component of such a network for coherent spin state control. This work hereby deals with the resonant single photon detection of fluorescence, which is emitted by resonantly exited V2 color centers in 4H-SiC. Therefore, a diode laser modulated by an electro-optical modulator performs a pulsed resonant excitation at one of the A₁ or A₂ spin-conservative optical transitions, while the emitted photons are detected by a superconducting single photon detector. However, due to the chromatic equality of the excitation photons and fluorescent photons, they are distinguished by their polarization.