SKM 2023 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.45: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

haracterization of a semiconductor microstructure analogous to a Venturi pump — •Severin Krüger, Fabian Liedtke, Peter Zajac, Andreas Wieck, Arne Ludwig, and Ulrich Kunze — Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum, Germany

Micro-structuring a high-mobility two-dimensional electron gas allows investigation of the ballistic transport regime for electrons. The electrons in the examined channel structures show edge effects like a minimal resistance at finite currents [1]. Furthermore, the electrons show hydrodynamical behavior and can create a rectifing voltage at the narrow channel, similar to the Venturi-effect [2]. Here, first results of measurements regarding the Venturi analogon with different channel sizes, gate voltages and source-drain currents are presented.

[1] Gurzhi, R.N.: "Minimum of Resistance in Impurity-free conductors" Soviet Phys. JETP 17, 521-522 (1963).
[2] Szelong, M.: "Ballistische und hdydrodynamische Vollwellengleichrichtung in nanoskaligen elektronischen GaAs/AlGaAs-Kreuzstrukturen" Disseration, Ruhr-Universität Bochum (2017).