SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster II
HL 33.58: Poster
Wednesday, March 29, 2023, 17:00–19:00, P1
Investigating the influence of stoichiometry-fluctuations on the electronic properties of ultra-scaled HBTs — •Daniel Dick1,3, Jörg Schuster1,2,3, Florian Fuchs2,3, and Sibylle Gemming3,4 — 1Center for Microtechnologies, Chemnitz University of Technology, Chemnitz, Germany — 2Fraunhofer Insitute for Electronic Nano Systems (ENAS), Chemnitz, Germany — 3Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, Germany — 4Institute of Physics, Chemnitz University of Technology, Chemnitz, Germany
Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have found widespread use in high-frequency applications. Scaling of the HBT base layer thickness to 5 nm and below makes an atomistic treatment indispensable as fluctuations of dopant concentrations play a bigger role.
We investigate the effect of scaling on properties such as band gap and carrier effective mass and obtain effective material parameters for use in simulations at a larger scale. The use of semi-empirical methods such as extended Hückel theory enables us to simulate a large number of permutations of the atomic structure and study statistical variation of its properties while first-principles methods such as density functional theory allow us to verify the results. Finaly, using the non-equilibrium Green's function method we investigate the effect of alloy and phonon scattering on transport through such a layer.