SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: 2D Materials V (joint session HL/CPP)
HL 34.2: Vortrag
Donnerstag, 30. März 2023, 09:45–10:00, POT 81
Electrical contact engineering on 2D material through ion implantation and flash lamp annealing — •kaiman lin1,2, yi li2, manfred helm2, shengqiang zhou2, yaping dan1, and slawomir prucnal2 — 1University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 20024 Shanghai, P. R. China — 2Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
In recent years, 2D material-based nanodevices have been extensively studied and exhibit highly competitive performance compared with conventional bulk semiconductors. Before they can be fully integrated with existing Si-based technology or offer new platform for novel nanoelectronics, some challenges must be solved. One of the key challenges in 2D devices is the large Schottky barrier at the 2D/metal interface, which limits the charge carrier injection from metal to 2D channel. In this paper, we propose a novel method, which exploits the top metal electrode as the capping layer during the ion implantation process, followed by ms-range flash lamp annealing to repair the defects caused by ion implantation and to activate dopants. Our approach allows to realize effective doping at the interface between multilayer 2D materials and metal electrodes and simultaneously minimize the defect concentration created during the ion implantation process. As a result, the ohmic contact between 2D material and metal electrodes will be realized.