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HL: Fachverband Halbleiterphysik

HL 36: Transport properties

HL 36.7: Vortrag

Donnerstag, 30. März 2023, 11:30–11:45, POT 151

Tunable preferable orientation of α-FeSi2 crystallites on silicon surfaces — •Tatiana Smoliarova, Ivan Tarasov, and Ulf Wiedwald — Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, 47057, Duisburg, Germany

Nowadays, one of the most important applications of silicon (Si) and Si-based functional materials is microelectronics. Silicon forms compounds in the form of solid solutions or intermetallic compounds * silicides. Metallic α-FeSi2 phase can be used as a contact material to silicon or to the semiconducting β FeSi2 phase with good ohmic characteristics.

In this work, we discuss the growth of α-FeSi2 submicron-size crystallites on gold-activated and gold-free p-Si(001), p-Si(110) and p-Si(111) surfaces via molecular beam and reactive epitaxy. The study reveals that the surfactant-assisted mediated epitaxy regulates morphology and the preferable orientation relationship (OR) of the crystallites to Si. According to the X-ray diffraction, strongly preferable ORs are α-FeSi2(001)//Si(001), α-FeSi2(001)//Si(111), α-FeSi2(001)//Si(110) for gold-activated and α-FeSi2(111)//Si(001), α-FeSi2(211)//Si(110), α-FeSi2(112)//Si(111) for gold-free Si substrates. Thus, the orientation control of fabricated α-FeSi2 crystallites can be used for tuning electron transport across the metal/semiconductor interface.

We acknowledge Ivan Yakovlev and Ivan Nemtcev (Krasnoyarsk, Russia) for assistance in sample preparation.