SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Materials and devices for quantum technology II
HL 37.2: Talk
Thursday, March 30, 2023, 09:45–10:00, JAN 0027
Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers — •Dennis Deutsch, Christopher Henrik Buchholz, Klaus Jöns, and Dirk Reuter — Universität Paderborn, Warburger Str. 100, 33098 Paderborn
Quantum communication technology requires sources for the on-demand generation of entangled photon pairs, preferably in the optical C-band for long-haul fiber-based communication. Quantum dots grown on InP substrates seem to be an ideal candidate: Here photon pairs can be generated from the biexciton-exciton cascade with emission wavelengths around 1.55 µm. However, the conventional approach of Stranski-Krastanov grown InAs quantum dots leads to several challenges related to the strain driven growth. In this study we report on an alternative approach allowing for unstrained quantum dots by filling of local droplet etched (LDE) nanoholes. The quantum dots are embedded in an In0.52Al0.48As matrix lattice-matched to the InP substrate and grown by molecular beam epitaxy. We show detailed investigations of the hole morphology measured by atomic force microscopy. Statistical analysis of nanoholes shows promising symmetry for a good number of them when etched at optimized temperatures. Furthermore, we see that filling of the holes with In0.53Ga0.48As works under the right growth conditions. By capping the filled holes and performing photoluminescence measurements we observe emission in the O-band up into the C-band depending on the filling height of the nanoholes.