SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Materials and devices for quantum technology II
HL 37.3: Talk
Thursday, March 30, 2023, 10:00–10:15, JAN 0027
Scalable Quantum Memory Nodes using nuclear spins in Silicon Carbide — •Shravan Kumar Parthasarathy1,2, Birgit Kallinger1, Florian Kaiser3,4, Patrick Berwian1, Durga Dasari3,4, Jochen Friedrich1, and Roland Nagy2 — 1Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany — 2Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Erlangen, Germany — 33rd Institute of Physics and Stuttgart Research Center of Photonic Engineering (SCoPE), University of Stuttgart,70569 Stuttgart, Germany — 4Center for Integrated Quantum Science and Technology (IQST), Germany
The ultimate motivation of my project is to address the possibility of building a quantum analogue of Internet of Things in order to improve the standards of quantum information processing. A distributed quantum computing network which is capable of achieving this goal, would require large sets of memory nodes. The challenge in this field has been in realizing such memory nodes with features for scalable quantum computing. Solid state spins in 4H-Silicon Carbide (4H-SiC) provides a suitable platform in achieving this goal wherein a controlled generation of highly coherent qubit registers using nuclear spins (13C or 29Si) and silicon vacancy color centers (VSi− center) are possible. A numerical model is hence established in order to investigate the influence of material or experimental parameters on number of such controllable nuclear spins. This study would be helpful in finding the optimal parameters to maximize qubits in Quantum Memory Nodes.