SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: Materials and devices for quantum technology II
HL 37.6: Vortrag
Donnerstag, 30. März 2023, 11:15–11:30, JAN 0027
X-ray nanobeam measurements of nanoscale elastic strain in electron shuttling devices — •Cedric Corley-Wiciak1, Marvin H. Zoellner1, Ignatii Zaitsev1, Costanza L. Manganelli1, Edoardo Zatterin2, Ketan Anand1, Agnieszka A. Corley-Wiciak1, Felix Reichmann1, Yuji Yamamoto1, Michele Virgilio3, Lars Schreiber4, Wolfram Langheinrich5, Carsten Richter6, and Giovanni Capellini1,7 — 1IHP, Frankfurt(Oder), Germany — 2ESRF, Grenoble, France — 3Department of Physics, Università di Pisa, Italy — 4JARA Institute, RWTH Aachen University, Germany — 5Infineon Technologies Dresden GmbH und Co.KG, Germany — 6IKZ, Berlin, Germany — 7Dipartimento di Scienze, Universita Roma Tre, Italy
Recently, spin qubits housed in electrostatic quantum dots in epitaxial Si/SiGe heterostructures have evolved by the demonstration of multi-qubit algorithms. One key requirement for realizing arrays of qubits with shared gate control is highly homogenous lattice strain in the Si quantum well (QW) hosting the qubits. We leverage Scanning Xray Diffraction Microscopy (SXDM), performed at the beamline ID01/ESRF, to map the strain tensor around several fully CMOS compatible electron shuttling devices for qubit interconnection (QuBus). We observe local modulations of the lattice strain by several 10−4, which are translated into spatially resolved profiles for the energy of the conduction band valley state, showing local fluctuations > 1meV. Thus, our results demonstrate that material inhomogeneities must be considered in the design for scaled quantum processors.