SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 41: Oxide Semiconductors I: Ga2O3
HL 41.2: Vortrag
Donnerstag, 30. März 2023, 15:15–15:30, POT 81
Strain-induced polymorph conversion in gallium oxide via focused ion beam irradiation — •Umutcan Bektas, Paul Chekhonin, and Gregor Hlawacek — Insitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
Monoclinic β-Ga2O3 is chemically and thermally the most stable compound compared to its other polymorphs. It is a promising semiconductor material for power electronics, optoelectronics, and batteries. However, controlling the metastable polymorph phases is challenging, and the fabrication technology at the nanoscale is immature. Our goal is to understand and control the polymorph conversion, so we can establish new fabrication methods of single-phase polymorph coatings, buried layers, multilayers, and different nanostructures in gallium oxide.
Under ion beam irradiation, most semiconductors show transformation from crystalline to amorphous structure due to ion beam induced damage. However, it is observed that, this transformation is suppressed in gallium oxide, and a polymorph conversion is observed instead. Here, we use Gallium and Neon focused ion beams (FIB) from different sources (GFIS, LMIS) to create local strain and induce the polymorph transition. After irradiation, characterization of the exposed areas was conducted by electron backscatter diffraction (EBSD) and atomic force microscopy (AFM). First results indicate that the strain created by the FIB irradiation leads to a local transformation of beta gallium oxide to another polymorph.