SKM 2023 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 41: Oxide Semiconductors I: Ga2O3
HL 41.3: Talk
Thursday, March 30, 2023, 15:30–15:45, POT 81
Comparative Study of Temperature-dependent Bandgap Transitions in Ga2O3 Polymorphs — •Benjamin Moritz Janzen1, Marcella Naomi Marggraf1, Moritz Meißner1, Nils Bernhardt1, Conrad Valentin Hartung1, Nima Hajizadeh1, Felix Nippert1, and Markus Raphael Wagner1,2 — 1Technische Universität Berlin, Institute of Solid State Physics, Germany — 2Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany
We employ a combined experimental-theoretical study to investigate the electronic bandgap transitions in Ga2O3 polymorphs as a function of the sample temperature. For this purpose, we apply temperature-dependent UV photoluminescence excitation (PLE) spectroscopy for the β-, κ-, α- and γ-polymorphs in the temperature range between 5 and 300 K and compare the obtained bandgap values with room temperature measurements of the dielectric function as determined by spectroscopic ellipsometry. The obtained temperature dependencies are discussed in conjunction with DFT calculations regarding the effects of electron-phonon coupling.