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HL: Fachverband Halbleiterphysik
HL 41: Oxide Semiconductors I: Ga2O3
HL 41.6: Talk
Thursday, March 30, 2023, 16:30–16:45, POT 81
Electrical and thermal transport properties of ZnGa2O4 — Johannes Boy1, Rüdiger Mitdank1, Zbigniew Galazka2, and •Saskia Fischer1 — 1Novel Materials Group, Humboldt-Univ. zu Berlin, Germany — 2Leibniz-Institute of Crystal Growth, Berlin, Germany
The first full experimental determination of the low-temperature electrical, thermo-electrical [1] and thermal properties [2] of novel highly pure single crystalline ZnGa2O4 is reported. The temperature-dependences of the charge carrier density, mobility, and Seebeck coefficient including phonon drag are discussed between 10 K and 310 K. The thermal conductivity and diffusivity were determined by the so-called 2ω-method. At room temperature the electrical conductivity is 286 S/cm, the mobility 55 cm2/Vs, the Seebeck coefficient 125 µ V/K and the thermal conductivity is 22.9 W/mK. For temperatures above 100 K the phonon transport is limited by phonon Umklapp scattering. At lower temperatures boundary scattering at lattice defects limits the thermal conductivity to 95 W/mK. Therefore, if the cause of boundary scattering is reduced or eliminated, the thermal conductivity of ZnGa2O4 may be increased at low temperatures.
[1] J. Boy, et al., AIP Advances 10, 055005 (2020) [2] J. Boy, et al., Materials Research Express 9, 065902 (2022).