SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 41: Oxide Semiconductors I: Ga2O3
HL 41.7: Vortrag
Donnerstag, 30. März 2023, 16:45–17:00, POT 81
Temperature- and Polarisation- Dependant Photoluminescence Excitation Spectroscopy of β−Ga2O3. — •Moritz Meißner1, Nils Bernhard1, Felix Nippert1, Benjamin M. Janzen1, Conrad V. Hartung1, Zbigniew Galazka2, and Markus R. Wagner1,3 — 1Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany — 2Leibniz-Initut für Kristallzüchtung, Berlin, Germany — 3Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
The anisotropic, ultra-wide bandgap semiconductor β−Ga2O3 represents a promising candidate for applications in high power electronics. The high anisotropy of the monoclinic crystal structure and the formation of self-trapped excitons has made a precise determination of the bandgap parameters a challenging endeavor. In this work, we apply polarization- and temperature-dependent photoluminescence excitation spectroscopy (PLE) measurements to study the anisotropy of the optical bandgap transitions. The temperature dependence of the PLE spectra between 5K and 300K provides information on the strength of the electron-phonon coupling and zero temperature bandgap energies along the principal axes of the material. The measurements were performed on the three crystal planes (100), (010) and (001) prepared and polished from the same single bulk crystal grown by the Czochralski method. Our results are discussed in comparison with absorption, transmission, and reflectance spectroscopy data in the literature.