HL 41: Oxide Semiconductors I: Ga2O3
Donnerstag, 30. März 2023, 15:00–17:00, POT 81
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15:00 |
HL 41.1 |
Thermal Conductivities of Ga2O3 Polymorphs: Analysis of Anharmonicity and Anisotropy — •Shuo Zhao, Matthias Scheffler, and Christian Carbogno
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15:15 |
HL 41.2 |
Strain-induced polymorph conversion in gallium oxide via focused ion beam irradiation — •Umutcan Bektas, Paul Chekhonin, and Gregor Hlawacek
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15:30 |
HL 41.3 |
Comparative Study of Temperature-dependent Bandgap Transitions in Ga2O3 Polymorphs — •Benjamin Moritz Janzen, Marcella Naomi Marggraf, Moritz Meißner, Nils Bernhardt, Conrad Valentin Hartung, Nima Hajizadeh, Felix Nippert, and Markus Raphael Wagner
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15:45 |
HL 41.4 |
Anisotropic IR active phonon modes and fundamental direct band-to-band transitions in α-(AlxGa1−x)2O3 alloys grown by MOCVD — •Elias Kluth, A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Rüdiger Goldhahn, and Martin Feneberg
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16:00 |
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15 min. break
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16:15 |
HL 41.5 |
The contribution has been withdrawn.
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16:30 |
HL 41.6 |
Electrical and thermal transport properties of ZnGa2O4 — Johannes Boy, Rüdiger Mitdank, Zbigniew Galazka, and •Saskia Fischer
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16:45 |
HL 41.7 |
Temperature- and Polarisation- Dependant Photoluminescence Excitation Spectroscopy of β−Ga2O3. — •Moritz Meißner, Nils Bernhard, Felix Nippert, Benjamin M. Janzen, Conrad V. Hartung, Zbigniew Galazka, and Markus R. Wagner
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