SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 43: Semiconductor lasers II

HL 43.2: Vortrag

Donnerstag, 30. März 2023, 15:30–15:45, JAN 0027

Towards a quantum dot based semiconductor optical amplifier for sensing applications in the telecom O-band — •Philipp Noack, Michael Zimmer, Sergej Vollmer, Michael Jetter, and Peter Michler — Universität Stuttgart, IHFG

Optical methods for gas sensing are of great interest in recent technologies. To facilitate the optical detection of gases, a swept laser source can be realized through a semiconductor optical amplifier (SOA) and a tunable MEMS filter.

MOVPE grown quantum dots (QDs) are a prime candidate for providing gain in such a SOA system because of fast charge carrier recovery times and broad gain spectrum created by the statistical distribution of QD sizes.

To this end, we grow InGaAs QDs on a GaAs substrate. We control the growth parameters, such as material flow and growth time, to produce QDs at high densities. We incorporate a dots-in-well structure to shift the emission into the telecom O-band and to improve charge carrier confinement. To provide sufficient gain in a broad spectrum, we especially investigate the properties of vertically stacked QD layers.

After the optimization of the gain structure we perform optical simulations to find the electric field modes of edge-emitting laser structures. Then we incorporate the investigated QDs into electrically pumped edge-emitting structures and characterize the net modal absorption and net modal gain spectra of the devices as antecedent of the SOA.