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HL: Fachverband Halbleiterphysik
HL 44: Nitrides: Devices
HL 44.2: Vortrag
Donnerstag, 30. März 2023, 15:15–15:30, POT 112
Mitigating damage induced by strongly ionising radiation in nitride layered structures — •Miguel C. Sequeira1, Mamour Sall2, Flyura Djurabekova3, Kai Nordlund3, Isabelle Monnet2, Clara Grygiel2, Christian Wetzel4, and Katharina Lorenz5 — 1HZDR, Dresden, Germany — 2CIMAP, Caen, France — 3University of Helsinki, Finland — 4RPI, New York, USA — 5INESC-MN, & IST-Universidade de Lisboa, Portugal
Group-III nitrides are well-known for their high radiation resistance, which brings them to extreme radiation environments. GaN is known for having a high resistance to strongly ionising radiation, such as Swift Heavy Ions (SHI) [1,2]. However, the behaviour of other nitrides under this radiation is not well understood especially when in layered structures (e.g. InGaN/GaN in LED). Here, we inspect how InGaN/GaN quantum wells (QW) resist SHI. We solve the Two-Temperature Model (TTM) using Finite Element Methods to show how the high electronic conductivity of InGaN in a QW acts as a heat sink, reducing the intensity of the ion-induced thermal spike in the entire InGaN/GaN structure. Combining TTM-Molecular Dynamics simulations and Transmission Electron Microscopy images show that the presence of QW significantly decreases the overall radiation damage in a device. The results presented here can lead to new radiation damage mitigation techniques, predict functional changes in devices under long radiation exposure, and ultimately improve device design.
[1] M. C. Sequeira et al., Communications Physics (2021); [2] M. C. Sequeira et al., Small (2022)