SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Nitrides: Devices

HL 44.4: Vortrag

Donnerstag, 30. März 2023, 15:45–16:00, POT 112

PL enhancement from Mie resonant silicon-rich-nitride nano-disks — •Krishna Koundinya Upadhyayula and Jörg Schilling — Martin Luther Universität Halle-Wittenberg, Halle

PECVD grown silicon-rich-nitride (SRN) exhibits refractive indices up to 3.5 and a broad luminescence in the visible up to near IR wavelengths making it a viable candidate for a photonic platform for bio-sensing at the therapeutic window. After a fundamental study on the origin of this photoluminescence (PL) in SRN using spectral and time resolved PL, we demonstrate the impact of Mie resonances on the luminescence by fabricating single Mie resonant SRN nano-disks with sizes on the order of a few 100nm. Comparing the measured PL-spectra with theoretically modelled transmission and emission spectra from finite element simulations, the observed PL-peaks could be attributed to the coupling of the emitters to electric dipole, magnetic dipole and higher order multipole Mie resonances. Furthermore, we created 2D periodic arrays of such SRN-Mie resonators with periods between 300-500nm and an absolute size of 100mm2 using interference lithography. The fabricated arrays exhibited an up to 27x enhancement of the room-temperature PL compared to that of an unstructured sample increasing further up 54x after hydrogen passivation. Tuning the structure parameters, we identify the remaining impact of the individual Mie-resonances in the spectra and the features caused by the grating/Bragg-resonances of the collective photonic crystal structure. Ongoing time resolved measurements will elucidate the impact of Purcell enhancement on the observed PL due to the Mie resonances.