SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 47: Oxide Semiconductors II

HL 47.3: Vortrag

Freitag, 31. März 2023, 10:00–10:15, POT 81

Electrical and thermoelectrical properties of the two-dimensional electron gas in polar discontinuity doped BaSnO3/LaInO3 heterostructure — •Fazeel Zohair, Georg Hoffmann, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 7, Berlin, Germany

Transparent semiconducting oxides (TSOs) are key players for opto-electronic devices, among which high frequency applications benefit from electrical properties of two-dimensional electron gases (2DEGs) . In this contribution we demonstrate the electrical and thermoelectric properties of the 2DEG at the interface between a nonpolar perovskite oxide BaSnO3 and a polar perovskite oxide LaInO3, grown by plasma assisted molecular beam epitaxy. The electrical and thermoelectric properties are analyzed using Seebeck measurements and van der pauw-Hall measurements. Integrating the charge carrier concentrations from both measurements, we were able to deduce the thickness of the charge carrier system.