SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 47: Oxide Semiconductors II
HL 47.5: Talk
Friday, March 31, 2023, 10:45–11:00, POT 81
Cloud in cell scheme based stochastic modelling of BiFeO3 memristor for circuit simulations — •sahitya yarragolla1, nan du2,3, torben hemke1, xianyue zhao2,3, ziang chen2, and thomas mussenbrock1 — 1Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Germany — 2Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany — 3Department of Quantum Detection, Leibniz Institute of Photonic Technology , Jena, Germany
In recent years, analog memristive devices have been extensively investigated for neuromorphic computing and hardware security applications. It is found that these devices show excellent properties such as long retention time, intrinsic stochasticity, and fast switching. However, the switching mechanism in these devices from the physics point of view is still under discussion. Therefore, in this work, we focus mainly on understanding the resistive switching based on the transport of oxygen vacancies in the interface-type Au/BiFeO3 (BFO)/Pt/Ti memristive devices using a 1D cloud-in-a-cell model. The proposed model combines the advantages of both 1D concentrated and 3D distributed models in a single model. The model is stochastic and computationally less expensive, making it suitable for circuit simulations. The calculated I-V characteristics of BFO memristor using the proposed are in excellent agreement with the experimental results. Furthermore, the response of the BFO memristor to changes in electrical properties, temperature and retention characteristics are analyzed, and the results show reasonable agreement with experimental findings.