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HL: Fachverband Halbleiterphysik

HL 47: Oxide Semiconductors II

HL 47.6: Vortrag

Freitag, 31. März 2023, 11:00–11:15, POT 81

Comparing processing strategies for Indium oxide field-effect transistors — •Fabian Schöppach, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany

Indium oxide (In₂O₃) combines promising physical properties such as high carrier mobility and transparency in the visible. However, due to its tendency to form an electron accumulation layer on its surface (SEAL), the use of In₂O₃ in active devices is generally difficult. We use the published strategies, compensating Mg doping [1] and oxygen plasma treatment [2], to suppress SEAL formation and allow the films to be used in FET devices. In addition, In₂O₃ as sesquioxide is a very robust material that resists classical patterning processes such as wet chemical etching.

We identified two different fabrication strategies to structure our films laterally: Plasma-assisted etching and using a wet-chemical soluble sacrificial layer. In this work, both strategies are compared regarding additionally necessary processing steps and the final devices’ performance. We used In₂O₃ films grown by pulsed laser deposition. For the source and drain contacts, gold was deposited via inert ambient sputtering. Schottky gate diodes were fabricated in a reactive sputtering process, which is a prerequisite for obtaining electrically rectifying contacts to In₂O₃ [3].

[1] Schmidt, et al. physica status solidi (b) 252.10, 2304–2308 (2015)

[2] Michel, et al. ACS Appl. Mater. Interf. 11, 27073–27087 (2019)

[3] von Wenckstern, et al. APL Materials 2.4, 046104 (2014)