HL 47: Oxide Semiconductors II
Freitag, 31. März 2023, 09:30–11:30, POT 81
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09:30 |
HL 47.1 |
Origin of Resistive Switching in SrTiO3 — •Wahib Aggoune, Christian Carbogno, Martin Albrecht, and Matthias Scheffler
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09:45 |
HL 47.2 |
Second harmonic generation of blue series excitons in Cu2O — •Andreas Farenbruch, Dietmar Fröhlich, Heinrich Stolz, Dmitri R. Yakovlev, and Manfred Bayer
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10:00 |
HL 47.3 |
Electrical and thermoelectrical properties of the two-dimensional electron gas in polar discontinuity doped BaSnO3/LaInO3 heterostructure — •Fazeel Zohair, Georg Hoffmann, and Oliver Bierwagen
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10:15 |
HL 47.4 |
Analysis of thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Holger von Wenckstern, and Marius Grundmann
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10:30 |
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15 min. break
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10:45 |
HL 47.5 |
Cloud in cell scheme based stochastic modelling of BiFeO3 memristor for circuit simulations — •sahitya yarragolla, nan du, torben hemke, xianyue zhao, ziang chen, and thomas mussenbrock
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11:00 |
HL 47.6 |
Comparing processing strategies for Indium oxide field-effect transistors — •Fabian Schöppach, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann
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11:15 |
HL 47.7 |
Charge carrier diffusion and localization in metal oxide photoabsorbers — •Hannes Hempel, Markus Schleuning, Klaus Schwarzburg, Rainer Eichberger, Roel van de Krol, Moritz Kölbach, Fatwa F. Abdi, and Dennis Friedrich
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