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HL: Fachverband Halbleiterphysik

HL 49: Quantum dots: Devices

HL 49.2: Vortrag

Freitag, 31. März 2023, 09:45–10:00, POT 151

Heterogeneous integration of telecom c-band emitting quantum dots on silicon photonics platform by adhesive bonding — •Ponraj Vijayan, Fiona Braun, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany

Silicon photonics for telecommunications applications has garnered much attention recently. The optical transparency and the large refractive index contrast of silicon in the telecommunication wavelengths allow the implementation of high-density photonic integrated circuits. The drawback of silicon photonics is that there is no native light source due to the indirect band-gap nature of silicon. Integration of III-V material, which offers outstanding optical emission properties, on silicon provides a potential solution. The direct growth of III-V materials on silicon is the most desired approach because it is economically favourable. However, it is challenging because of large lattice mismatch between the III-V materials and silicon. An alternate approach for large-scale integration is through heterogeneous integration of thin III-V membrane using adhesive bonding technique. For such integration, it is crucial to have a robust bonding procedure which provides a uniform bonding layer with a desired thickness for efficient light coupling between III-V active layer and the silicon photonic platform. Our group has previously developed InAs QD/InGaAs MMB/GaAs substrate structures for long-distance optical fiber applications [3]. Here, we report on the route to integrate the telecom C-band emitting InAs QD on silicon photonic platform using adhesive bonding.