SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 49: Quantum dots: Devices
HL 49.7: Talk
Friday, March 31, 2023, 11:30–11:45, POT 151
GaSb Quantum Dots as Emitters of Telecom S-Band Single Photons — •Johannes Michl1, Giora Peniakov2, Andreas Pfenning1, Joonas Hilska2, Abhiroop Chellu2, Teemu Hakkarainen2, Tobias Huber-Loyola1, Mircea Guina2, and Sven Höfling1 — 1Technische Physik, Julius-Maximilians-Universität Würzburg, Germany — 2Physics Unit / Photonics Faculty of Engineering and Natural Sciences, Tampere University, Finland
Over the last few years, several semiconductor quantum dot (QD) material platforms like In(Ga)As)/ GaAs and InAs/InP have emerged as resources for non-classical light and spin-photon interfaces in the telecom wavelength range. However, there is not much data on the optical and spin properties of GaSb QDs, despite it being a physically rich system. For example, it is possible to switch between direct and indirect bandgap by controlling the size of the quantum dots. Moreover, due to reduced strain, it is expected to have less quadrupole nuclear interaction resulting in enhanced spin dephasing times, similar to what was recently observed in GaAs QDs in AlGaAs. Here, we investigate the (quantum-) optical properties of GaSb quantum dots which are fabricated by filling droplet-etched nanoholes in an AlGaSb matrix and exhibit photoluminescence (PL) with a narrow linewidth in the telecom S-band. We perform polarization resolved magneto-PL studies to investigate charge complexes in our sample and perform correlation measurements to evaluate the use of GaSb quantum dots as a source of indistinguishable single photons.