Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 50: Materials and devices for quantum technology III
HL 50.3: Vortrag
Freitag, 31. März 2023, 10:00–10:15, JAN 0027
Spatially controlled fabrication of telecom single-photon emitters in Si by focused ion beam implantation — •Nico Klingner1, Michael Hollenbach1,2, Nagesh Jagtap1, Lothar Bischoff1, Ciaran Fowley1, Ulrich Kentsch1, Gregor Hlawacek1, Artur Erbe1, Nikolay Abrosimov3, Manfred Helm1, Yonder Berencen1, and Georgy Astakhov1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany — 3Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany
Single photon emitters (SPE) are the starting point and foundation for future photonic quantum technologies. We present the laterally controlled fabrication of single G and W centers in silicon that emit in the telecom O-band. We utilized home built gold-silicon liquid metal alloy ion sources (LMAIS) in a focused ion beam (FIB) system to perform mask-free implantation of 40 keV Si ions from 6 to 500 ions per spot. Analysis and confirmation of SPEs has been done in a home-build cryo-photoluminescence setup. We will demonstrate a success rate of more than 50% and upscaling to wafer-scale. We will also provide an insight and overview on the LMAIS technology and an outlook on other potential applications of FIB implantation. arXiv:2204.13173