SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 50: Materials and devices for quantum technology III
HL 50.4: Vortrag
Freitag, 31. März 2023, 10:15–10:30, JAN 0027
Plasma studies by optical emission spectroscopy for phosphorus doped diamond — •Felix Hoffmann1, Nicola Lang1, Philipp Reinke2, Peter Knittel1, and Volker Cimalla1 — 1Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, D-79108 Freiburg, Germany — 2Quantum Brilliance GmbH, Industriestraße 4, D-70565 Stuttgart, Germany
While p-doping of diamond by Boron is a well-controlled process, n-doping by Phosphorus (P) remains challenging due to its low solubility and big covalent radius in comparison to carbon. The control of plasma conditions and the understanding of its influence on growth parameter is crucial for single crystal diamond growth by microwave plasma assisted chemical vapor deposition (MPCVD) [1]. Hydrogen-methane plasmas with dopant-carrier gases have been analyzed with respect to kinetic gas temperature (of the C2 band) and radical concentration by optical emission spectroscopy (OES) under various experimental conditions such as excitation power, operating pressure and gas concentrations [2]. Here we present results of P-doped diamond growth using the carrier gas trimethylphosphine (TMP) and point out the influence of TMP on plasma properties and its relation to growth parameter of P-doped {111} diamond grown by MPCVD.
[1] V. Mortet et al. Diamond and Related Materials, 2022, 124, 108928
[2] Mikhail Aleksandrovich Lobaev et al. Phys. Satus Solidi A, 2019, 216, 1900234