SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Nitrides: Preparation and Characterization
HL 51.8: Vortrag
Freitag, 31. März 2023, 11:30–11:45, POT 112
On the variation of PL intensity in GaInN/GaN quantum wells with different cladding thicknesses — •Nico Wagner1, Shawutijiang Sidikejiang1,2, Philipp Henning1,2, Rodrigo de Vasconcellos Lourenço1,2, Heiko Bremers1, Uwe Rossow1,2, and Andreas Hangleiter1,2 — 1Institute of Applied Physics, Technische Universität Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Braunschweig, Germany
The absolute internal quantum efficiency (IQE) of GaInN/GaN quantum wells (QW) at low temperature can be determined using time-resolved photoluminescence (PL) measurements. If the IQE is 100 %, the PL intensity under steady state conditions is expected to be the same for all samples. We can verify that for some samples, but others show different intensities. It turns out that the difference varies for different cladding thicknesses, i.e. the layer between the QW and air. In this work, we present a model calculating the allowed modes inside the sample assuming that all the light is emitted into them if we have 100 % IQE. Due the small critical angle, it is important to determine the small ratio of intensity, which is coupled out and detected. The result yields an oscillating behavior as a function of the cladding thickness and shows a good agreement with the measured samples. It is important to note that this is a consequence of the Purcell effect, i.e. that spontaneous emission depends on the optical environment.